Monday, June 3, 2013: 1:50 PM
Ballroom B (Galt House Hotel)
We report the synthesis of silicon nanowires using Ga at low temperatures. The nanowire growth was directed via silane exposure of Ga droplets supported on different substrates under plasma excitation. The kinetic data suggests that the dissolution kinetics was faster for thicker droplets compared to that with smaller sized droplets.
Extended Abstracts:
- NACS2013_Carreon.pdf (160.1KB) - Extended Abstract