Photoelectrochemical Characterization of In<sub>x</sub>Ga<sub>1-x</sub>N Alloys Grown on GaN Nanowire Substrates

Martinez, Alejandro

Monday, June 3, 2013: 11:20 AM

Jones (Galt House Hotel)

Alejandro Martinez¹, Sowmya Kolli¹, Jacek Jasinski¹, Bruce Alphenaar¹, Todd Deutsch² and Mahendra Sunkara¹, (1)University of Louisville, USA, (2)National Renewable Energy Laboratory, USA.

This study reviews the photoelectrochemical characterization of InGaN alloy epilayers grown on "a" and "c" plane GaN nanowire substrates. The performance of these band gap tunable semiconductors in water splitting is discussed.

Extended Abstracts:

extended abstract Alejandro Martinez.pdf (360.4KB) - Extended Abstract

O-M-Jon-6 Photoelectrochemical Characterization of InxGa1-xN Alloys Grown on GaN Nanowire Substrates

O-M-Jon-6 Photoelectrochemical Characterization of In_xGa_1-xN Alloys Grown on GaN Nanowire Substrates