Surface Sn-doping of Photocatalysts for Improved Charge Carrier Availability

A doping of TiO₂ and ZnO with isolated Sn(II) cations restricted to the surface is achieved by grafting and controlled reduction. Sn(II) hole traps at the semiconductor surface were created resulting in improved activity for dye degradation reactions and oxygen evolution from water-splitting in presence of a sacrificial agent.